m) Thermal Resistance Parameter RJC (IGBT) RJC ( DIODE ) RCS (MODULE) Wt Typ.Text: Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current, (0.55-0.8 N Rejc (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction Rejc ( DIODE ) Junction-to-Case, each diode, one diode in conduction RecS (MODULE) Wt Case-to-Sink,flat,greased surface, Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Vge = 0V, VCE = 600V, T j = 150Â☌ VĬPU165MU 360Vdc, C-740 C735 transistor transistor c735 diode c735 diode C733 C737 transistor transistor C734Ībstract: transistor C733 c733 transistor transistor C734 C733 C738 transistor c735 diode c740 c734 diode C733 Text: ® 100 Ifm Diode Maximum Forward Current V ge Gate-to-Emitter Voltage Â☒0 V V isol, Temperature Range 17 Diode Continuous Forward Current A 15 100 Maximum Power Dissipation, each, Parameter Typ. Diode c737 Datasheets Context Search Catalog DatasheetĪbstract: transistor c735 diode c735 diode C733 C737 transistor transistor C734
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